The SCT4013DLLTRDC 750V MOSFET from ROHM benefits from the properties of the SiC material to offer very fast switching and ultra-short diode recovery, enabling power-system designers to reduce switching loss in addition to system size and weight.
Gate charge is 170nC at 500V, with rise/fall times measured in tens of nanoseconds. These figures mean that the SCT4013DLLTRDC can switch rapidly in dc-dc converters and motor drives.
This fourth-generation MOSFET provides very high current in a compact package, maximum continuous drain current is 120A. On-resistance of 13mΩ at 25°C produces minimal conduction loss. The high-voltage, high-current capability of the SCT4013DLLTRDC makes it ideal for power-dense applications in which efficiency is highly important.
Housed in a TO-263-7L package, the SCT4013DLLTRDC features a 26% smaller footprint than a conventional TO-263 while enabling excellent heat dissipation. The superior thermal performance is valuable in applications such as solar inverters, server power supplies and electric vehicle chargers.
