Lower conduction loss and faster commutation to help raise power density in automotive power stages. The STK295N10F8AG pairs a 100V drain-source rating with a maximum on-resistance of 1.9mΩ and continuous drain current capability up to 302A.
At the technology level, the STripFET F8 construction reduces internal capacitances and gate charge for faster, more efficient switching. In the wider STripFET F8 series, lower output capacitance helps to curb drain-source voltage spikes and charge-discharge losses, while an enhanced body-drain diode improves switching softness to reduce electromagnetic interference and ease EMC verification in low-voltage automotive systems.
For demanding under-bonnet and high-current systems, the STK295N10F8AG also offers strong robustness margins. The power MOSFET is AEC-Q101 qualified, 100% avalanche tested, and specified for a maximum operating junction temperature of 175°C, while the PowerLeaded 8×8 package supports thermal performance with 0.39°C/W junction-to-case thermal resistance.
