Vishay — SiJ188DP MOSFET

The SiJ188DP, a 60 V MOSFET from Vishay, offers an excellent combination of low on-resistance and low gate charge, to give high efficiency in PWM switching applications and dc-dc converters.

The SiJ188DP’s figure-of-merit for the product of on-resistance and gate charge is 41% lower than that of the next best product. On-resistance is a maximum 3.85 mΩ at a gate-source voltage of 10 V. Gate charge is 22 nC.

Increased efficiency also results from the SiJ188DP’s class-leading figure-of-merit for the product of on-resistance and output charge. It is 25% lower than that of the next best product, enabling power-system designers to reduce power loss during diode conduction. This makes the SiJ188DP ideal for use in circuits which implement synchronous rectification.

The MOSFET is housed in a Vishay PowerPAK^® SO-8L package with gull-wing shaped leads which resist mechanical and thermal stress during temperature cycling, and tolerate stress-induced movement. This results in higher board-level reliability.

The PowerPAK SO-8L has a footprint which is 52% smaller and a profile which is 50% lower than that of a standard DPAK package.