Vishay — SiJ188DP MOSFET

Vishay SiJ188DP MOSFETs

60 V MOSFET gives improved efficiency in switching power converters

The SiJ188DP, a 60 V MOSFET from Vishay, offers an excellent combination of low on-resistance and low gate charge, to give high efficiency in PWM switching applications and dc-dc converters.


The SiJ188DP’s figure-of-merit for the product of on-resistance and gate charge is 41% lower than that of the next best product. On-resistance is a maximum 3.85 mΩ at a gate-source voltage of 10 V. Gate charge is 22 nC.


Increased efficiency also results from the SiJ188DP’s class-leading figure-of-merit for the product of on-resistance and output charge. It is 25% lower than that of the next best product, enabling power-system designers to reduce power loss during diode conduction. This makes the SiJ188DP ideal for use in circuits which implement synchronous rectification.


The MOSFET is housed in a Vishay PowerPAK® SO-8L package with gull-wing shaped leads which resist mechanical and thermal stress during temperature cycling, and tolerate stress-induced movement. This results in higher board-level reliability.


The PowerPAK SO-8L has a footprint which is 52% smaller and a profile which is 50% lower than that of a standard DPAK package.


  • Maximum drain current: 92.4 A at 25°C case temperature
  • Operating-temperature range: -55°C to 150°C
  • 3.6 V maximum gate-source threshold voltage


  • Switch-mode power supplies
  • Motor drives
  • Battery management systems
Vishay — SiJ188DP MOSFET

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