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STMicroelectronics | STGP14NC60KD

Manufacturer Part #

STGP14NC60KD

STGP Series IGBT Low On State Through Hole IGBT - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STGP14NC60KD - Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 25A
Power Dissipation-Tot: 80W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 50A
Collector - Emitter Saturation Voltage: 2.5V
Turn-on Delay Time: 22.5ns
Turn-off Delay Time: 116ns
Qg Gate Charge: 34.4nC
Reverse Recovery Time-Max: 37ns
Leakage Current: -100A
Input Capacitance: 760pF
Thermal Resistance: 62.5°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The STGP14NC60KD is a short-circuit rugged Insulated Gate Bipolar Transistor. This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.

Features:

  • Short circuit withstand time 10 μs.
  • Low on-voltage drop (VCE(sat))
  • Low Cres / Cies ratio (no cross conduction susceptibility)
  • Switching losses include diode recovery energy
  • Very soft ultra fast recovery antiparallel diode

Applications:

  • High frequency inverters
  • SMPS and PFC in both hard switch and resonant topologies
  • Motor drivers
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
2000
Multiple Of:
50
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Total
$1,170.00
USD
Quantity
Unit Price
50
$0.62
250
$0.605
1,000
$0.585
2,500
$0.575
6,250+
$0.56
Product Variant Information section
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