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Manufacturer Part #

STP10NK80Z

N-Channel 800 V 0.9 Ohm Flange Mount SuperMESH Power MosFet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP10NK80Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 0.9Ω
Rated Power Dissipation: 160W
Qg Gate Charge: 72nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 9A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 65ns
Rise Time: 20ns
Fall Time: 17ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Input Capacitance: 2180pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The STP10NK80Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeability

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,430.00
USD
Quantity
Unit Price
15
$1.48
50
$1.47
200
$1.44
500
$1.43
2,000+
$1.39
Product Variant Information section