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Infineon | SPP08N80C3XKSA1

Manufacturer Part #

SPP08N80C3XKSA1

N-Channel 800 V 8 A (Tc) 104 W (Tc) Through Hole Power MOSFET - PG-TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2335
Product Specification Section
Infineon SPP08N80C3XKSA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 0.65Ω
Rated Power Dissipation: 104W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 72ns
Rise Time: 15ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 1100pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$570.00
USD
Quantity
Unit Price
50
$1.16
200
$1.14
750
$1.12
2,000
$1.11
5,000+
$1.09
Product Variant Information section