text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IAUT300N10S5N015ATMA1

Infineon | IAUT300N10S5N015ATMA1

Manufacturer Part #

IAUT300N10S5N015ATMA1

IAUT300Nxx Series 100 V 1.5 mOhm 300 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2504
Product Specification Section
Infineon IAUT300N10S5N015ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.5mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 166nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 300A
Turn-on Delay Time: 29ns
Turn-off Delay Time: 70ns
Rise Time: 15ns
Fall Time: 48ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 12316pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$5,160.00
USD
Quantity
Unit Price
2,000+
$2.58
Product Variant Information section