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Référence fabricant
IMT65R022M1HXUMA1
CoolSiC Series 650 V 79 A 30 mOhm Single N-Channel MOSFET - PG-HSOF-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :HSOF-8 Méthode de montage :Surface Mount |
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Infineon IMT65R022M1HXUMA1 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Subject CoolSiCTM 650V G1 SiC datasheets revision updatesReason: (1) Naming and nomenclature update according to IEC 60747-8 Amd.1 Ed.3.03 from 2020(2) Update Tj,max from 150°C to 175°C for the following products:IMW65R027M1H, IMW65R048M1H,IMW65R072M1H,IMW65R107M1H,IMZA65R027M1H, IMZA65R048M1H,IMZA65R072M1H and IMZA65R107M1H(3) Extend the VGS(static) and VGS(dynamic) specs of products reported in Table 1 in TO247-3pin and TO247-4pin package.(4) Datasheet template harmonization with respect to CoolSiCTM MOSFET 650V G2
Statut du produit:
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Infineon IMT65R022M1HXUMA1 - Caractéristiques techniques
| Product Status: | Active |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 30mΩ |
| Rated Power Dissipation: | 375W |
| Qg Gate Charge: | 67nC |
| Gate-Source Voltage-Max [Vgss]: | 23V |
| Drain Current: | 196A |
| Turn-on Delay Time: | 8.4ns |
| Turn-off Delay Time: | 24.7ns |
| Rise Time: | 15.1ns |
| Fall Time: | 8ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 5.7V |
| Input Capacitance: | 2288pF |
| Style d'emballage : | HSOF-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
HSOF-8
Méthode de montage :
Surface Mount