Extending the Infineon CoolSiC silicon carbide (SiC) MOSFET family, the new 750V G2 technology helps power-system designers to improve system efficiency and increase power density in automotive and industrial power-conversion applications.
The 750V G2 technology is particularly notable for its low on-resistance. In the CoolSiC MOSFETs, on-resistance ratings range from 60mΩ for the 30A-rated IMDQ75R060M2H, down to 4mΩ for the 357A-rated automative-grade AIMDQ75R004M2H. This automotive MOSFET is supplied in a top-side cooled Q-DPAK package, which offers excellent thermal performance and reliability, and provides outstanding performance in static-switching applications.
The G2 SiC MOSFETs with the lowest on-resistance are the ideal choice for applications such as eFuses, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays.
The new G2 technology also features excellent figures of merit for on-resistance x output charge, and on-resistance x forward recovery charge, contributing to reduced switching loss in both hard- and soft-switching topologies. The reduced gate charge of Infineon’s second-generation SiC trench technology allows for faster switching and reduces gate-drive losses, making the MOSFETs more efficient in high-frequency applications.
A high gate-threshold voltage of 4.5V at 25°C and a low ratio of gate-drain to gate-source charge make the MOSFETs highly resistant to parasitic turn-on. In addition, wide gate-voltage tolerance provides engineers with greater design margins and good compatibility with other devices in the market.
The 750V CoolSiC G2 MOSFETs are qualified to AEC-Q101 standards for automotive-grade parts, and to a JEDEC standard for industrial-grade parts.
