The IMSQ120R026M2HH from Infineon is a 1,200 V CoolSiC silicon carbide (SiC) N-channel MOSFET in a top-side cooled Q-DPAK dual half-bridge package for use in industrial applications.
Fabricating a MOSFET power switch from silicon carbide provides multiple advantages over silicon, including faster switching, tolerance of higher operating temperatures, and lower switching losses. This enables power-system manufacturers to create products which are smaller, lighter, more efficient, and achieve higher power density.
The IMSQ120R026M2HH extends these advantages by using the Q-DPAK package, which reduces system cost by enabling easier assembly and providing outstanding thermal performance. Compared to bottom-side cooled solutions, a top-side cooled device such as the IMSQ120R026M2HH benefits from a superior PCB layout, which reduces the effects of parasitic components and stray inductances, while also providing enhanced thermal management capabilities.
The MOSFET has a robust body diode to enable hard commutation, and resists parasitic turn-on effects.
