Split-gate power MOSFETs streamline thermal and switching trade-offs

May 7, 2026

To boost efficiency and power density in high-current dc-dc rails, the Renesas REXFET-1 power metal oxide MOSFETs combine split-gate switching with compact packages.

Modern power designs are being pushed in two directions at once, higher current density on the PCB and tighter efficiency targets across load, temperature, and switching frequency. That creates a familiar set of trade-offs, conduction loss versus switching loss, plus thermal paths that often dictate overall size more than the schematic does. 

 

The Renesas REXFET-1 N-channel power MOSFET family targets this balance with split-gate technology and package options that let designers scale from compact point-of-load stages to high-current conversion. Across the range, the MOSFETs are specified for low drain-to-source on-state resistance (RDS(on)), low input capacitance, and 100% avalanche testing, with operating junction temperature specified from -55°C to 175°C. 

 

Part Number 

Drain-to-source Voltage 

Continuous Drain Current at 25°C 

On-resistance at 10V 

Package 

Package Focus 

RBE034N15R1SZPW#KB0 

150V 

200A 

3.4mΩ 

TOLT 

Top-side cooling, heatsink pinout 

RBE029N10R1SZN6#HB0 

100V 

160A 

2.9mΩ 

SO8-FL, 5mm x 6mm 

Wettable flanks, compact leadless 

RBE015N10R1SZQ4#GB0 

100V 

340A 

1.5mΩ 

TOLL 

Top-side cooling, high-current footprint 

RBE034N15R1SZQ4#GB0 

150V 

200A 

3.4mΩ 

TOLL 

Top-side cooling, high-current footprint 

RBE111N10R1SZN2#HB0 

100V 

40A 

11.1mΩ 

μSO8-FL, 3mm x 3mm 

Wettable flanks, ultra-compact 

RBE015N10R1SZPV#GB0 

100V 

340A 

1.5mΩ 

TOLG 

Gullwing leads for thermal cycling 

 

Where the family becomes especially useful is packaging. For space-constrained layouts that still need solid thermal performance and automated optical inspection support, small outline, 8-pin, flat lead (SO8-FL) and ultra-small outline, 8-pin, flat lead (μSO8-FL) packages use wettable flanks, helping assembly quality while keeping the footprint small. For higher power stages, the TO-Leadless (TOLL) and TO-Leaded top-side cooling (TOLT) options support top-side cooling, allowing heat extraction through the top of the package for compact, high-power boards. If thermal cycling robustness is a priority, the TO-Leaded with gullwing leads (TOLG) option keeps a similar profile to TOLL while using gullwing leads aimed at high thermal cycling capability. 

Features

  • REXFET-1 split-gate technology aimed at low on-resistance 
  • Standard level gate drive threshold voltage 
    • 2V to 4V range for 100V MOSFETs 
    • 2.2V to 3.7V for the 150V MOSFETs 
  • 100% avalanche tested 
  • MSL1 classification 

Applications

  • Industrial automation motor control 
  • Energy infrastructure conversion 
  • High-current dc-dc power conversion 
  • Power tools 
  • Robotics 
FTMIssue52026_Renesas_RBE034N15R

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