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STMicroelectronics | STB35N65M5

Manufacturer Part #

STB35N65M5

N-Channel 650 V 27 A 98 mOhm 160 W Surface Mount Power Mosfet - D2PAK-3

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Mfr. Name: STMicroelectronics
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Product Variant Information section
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Product Specification Section
STMicroelectronics STB35N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 98Ω
Rated Power Dissipation: 160|W
Qg Gate Charge: 83nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB35N65M5 is a N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET. These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. It is available in a D²PAK Package.

Features:

  • Worldwide best RDS(on)* area
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,460.00
USD
Quantity
Unit Price
1,000
$3.46
2,000+
$3.41
Product Variant Information section