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Infineon Technologies | IPG20N04S4L08ATMA1

Manufacturer Part #

IPG20N04S4L08ATMA1

Dual N-Channel 40 V 8.2 mOhm 39 nC OptiMOS™ Power Mosfet - TDSON-8-4

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IPG20N04S4L08ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 8.2mΩ
Rated Power Dissipation: 54W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 20A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 40ns
Rise Time: 3ns
Fall Time: 20ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 2350pF
Series: OptiMOS-T2
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$10,700.00
USD
Quantity
Unit Price
5,000+
$2.14
Product Variant Information section