
Manufacturer Part #
FDD6685
P-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Product Specification Section
onsemi FDD6685 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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onsemi FDD6685 - Technical Attributes
Attributes Table
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 20mΩ |
Rated Power Dissipation: | 1.6W |
Qg Gate Charge: | 17nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 11A |
Turn-on Delay Time: | 17ns |
Turn-off Delay Time: | 43ns |
Rise Time: | 11ns |
Fall Time: | 21ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 1.8V |
Technology: | PowerTrench |
Input Capacitance: | 1715pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
$Features & Applications
The FDD6685 is a 30 V 20 mΩ P-Channel MOSFET is a rugged gate version of advanced PowerTrench process It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 25 V)
Features:
- -40 A, -30 V
- RDS(ON) = 20 mΩ @ VGS = -10 V
- RDS(ON) = 30 mΩ @ VGS = -4.5 V
- Fast switching speed
- High performance trench technology for extremelylow RDS(ON)
- High power and current handling capability
- Qualified to AEC Q101
Applications:
- External AC-DC Merchant Power Supply -
- Wireless Communications
- Wireless LAN Access Point/Router
- E-book Reader
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
51 Weeks
Quantity
Web Price
2,500
$0.78
5,000
$0.63
7,500+
$0.625
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount