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Infineon Technologies | IPU80R4K5P7AKMA1

Manufacturer Part #

IPU80R4K5P7AKMA1

Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS™ Power Mosfet - IPAK

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IPU80R4K5P7AKMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 4.5Ω
Rated Power Dissipation: 13|W
Qg Gate Charge: 4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1.5A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 60ns
Rise Time: 15ns
Fall Time: 80ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Height - Max: 6.22mm
Length: 6.73mm
Input Capacitance: 80pF
Package Style:  IPAK
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
1500
Multiple Of:
75
Total
$442.50
USD
Quantity
Unit Price
1,500
$0.295
4,500
$0.29
6,000
$0.285
15,000
$0.28
22,500+
$0.275
Product Variant Information section