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Infineon Technologies | SPB80P06PGATMA1

Manufacturer Part #

SPB80P06PGATMA1

Single P-Channel 60 V 23 mOhm 115 nC SIPMOS® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2611
Product Specification Section
Infineon Technologies SPB80P06PGATMA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 340|W
Qg Gate Charge: 115nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,010.00
USD
Quantity
Unit Price
1,000
$2.01
2,000
$1.99
3,000
$1.98
4,000+
$1.97
Product Variant Information section