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Infineon | IRFS3206TRRPBF

Manufacturer Part #

IRFS3206TRRPBF

Single N-Channel 60V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFS3206TRRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 3mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 120nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 210A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 55ns
Rise Time: 82ns
Fall Time: 83ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 6540pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$840.00
USD
Quantity
Unit Price
800
$1.05
1,600
$1.04
3,200
$1.03
4,000+
$1.02
Product Variant Information section