Nexperia — Silicon Germanium (SiGe) Rectifiers

Fast switching and safe operation area

Nexperia’s SiGe rectifiers combine the high efficiency of Schottky rectifiers with the thermal stability of fast recovery diodes. Targeting automotive, server markets and communications infrastructure, the AEC-Q101 compliant rectifiers are of particular benefit in high-temperature applications. These extremely low leakage MOSFETs allow an extended safe-operating area with no thermal runaway up to 175 °C. And, at the same time, offer significant room to optimize your design towards higher efficiency.

For many circuit designs, the main challenges are integration of more functions per space, design for highest efficiency, and system miniaturization. Nexperia SiGe rectifiers are an ideal solution, providing the benefits of high efficiency, ease of thermal design, and a small form factor. Low forward voltage and low Qrr in combination with extremely high thermal stability are the main product features of these Nexperia rectifiers. The devices are housed in the clip-bonded FlatPower (CFP) packages CFP3 and CFP5.