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Manufacturer Part #
IRFR120NTRPBF
Single N-Channel 100 V 0.21 Ohm 25nC HEXFET® Power Mosfet - TO-252AA
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| Nombre del Fabricante: | Infineon | ||||||||||
| Número de pieza del fabricante: | Product Variant Information section Embalajes disponiblesCant. de paquetes:2000 por Reel Estilo de empaquetado:TO-252AA Método de montaje:Surface Mount | ||||||||||
| Código de fecha: | |||||||||||
Infineon IRFR120NTRPBF - Especificaciones de producto
Información de envío:
ECCN:
Información del CP:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Estado del producto:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=es&field2=IRFR120NTRPBF&field4=Infineon&field18=https://p1emea.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/irfr120ntrpbf-infineon-2283828
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=es&field2=IRFR120NTRPBF&field4=Infineon&field18=https://p1emea.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/irfr120ntrpbf-infineon-2283828
Infineon IRFR120NTRPBF - Caracteristicas Técnicas
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.21Ω |
| Rated Power Dissipation: | 48|W |
| Qg Gate Charge: | 25nC |
| Estilo de empaquetado: | TO-252AA |
| Método de montaje: | Surface Mount |
Embalajes disponibles
Cant. de paquetes:
2000 por Reel
Estilo de empaquetado:
TO-252AA
Método de montaje:
Surface Mount