Vishay VS-C 650V Silicon Carbide (SiC) Schottky Diodes

New 650V SiC Schottky diodes boost efficiency in high-frequency power converters

Vishay Intertechnology has introduced ten new VS-C 650V Silicon Carbide (SiC) Schottky diodes for high-frequency rectification in the Power Factor Correction (PFC) stage of high-voltage power supplies and LLC converters.


The Vishay devices feature a merged PIN Schottky design which increases efficiency in high-frequency applications by reducing switching losses regardless of temperature variances, allowing the devices to operate at high temperatures. The merged PIN Schottky design shields the electric field from the Schottky barrier to reduce leakage currents, while increasing surge-current capability via hole injection.


Compared to silicon Schottky devices, these SiC diodes handle the same level of current with only a slight increase in forward-voltage drop, while providing substantially higher ruggedness.


  • Positive temperature coefficient of forward voltage for easy paralleling
  • Almost zero reverse-recovery charge
  • Almost zero switching losses
  • 175°C maximum junction temperature


  • Servers
  • Telecoms equipment
  • Uninterruptible power supplies
  • Solar inverters
Vishay - VS-C04ET07T-M3

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