The FF3MR20W3M1H_H11 module contains silicon-carbide (SiC) trench MOSFETs arranged for efficient operation in high-voltage switching applications including energy storage systems and solar power. The design supports a drain-source voltage of up to 2,000V, providing continuous dc drain current up to 275A.
The CoolSiC MOSFET structure inside the module has on-resistance of 2.6Ω, minimizing conduction and switching losses. The 2,000V M1H SiC MOSFET technology combined in the EasyPACK 3B is a fit for 2-level systems with 1,500V dc link voltage. The isolation test voltage of 3.2kV and integrated temperature sense enables a safe and reliable design of increasingly compact power stages.
Engineers can install the module easily as the FF3MR20W3M1H_H11 uses PressFIT contact technology for solder-free mounting, as well as integrated mounting clamps for rugged installation.
