ROHM has introduced the SCZ400x series of power modules which integrate 4th generation SiC MOSFET technology into the DOT-247 package. DOT-247 is a 2-in-1 molded module structure combining two dies to enable the use of larger chips than standard TO-247 footprints allow. This achieves a 15% reduction in thermal resistance and a 50% reduction in inductance compared to TO-247 components.
These improvements enable the SCZ400x series to deliver power density up to 2.3 times higher than equivalent TO-247 solutions in a half-bridge configuration, allowing designers to implement the same power circuitry in half the volume.
The series supports both half-bridge and common-source topologies, addressing demand for multi-level circuits such as three-level neutral point clamped (NPC), T-NPC, and five-level active NPC (ANPC) used in high-voltage photovoltaic systems.
The SCZ400x series includes 750V and 1200V options, with 750V power modules featuring on-resistance as little as 4mΩ and current capacity up to 251A, with 1200V modules offering resistance down to 6mΩ and up to 209A current.
