FTM / Power Solutions / STMicroelectronics — GANSPIN61xTR GaN High-power Density Half-bridge
STMicroelectronics brings its GaN half-bridge system-in-package in a quad flat no-lead (QFN) format, helping motor-drive designers tame fast edges, reduce electromagnetic interference (EMI), and cut thermal overhead in three-phase inverter stages.
The GANSPIN611TR and GANSPIN612TR are power system-in-package half-bridges that integrate two enhancement-mode GaN transistors with a high-voltage, high-frequency gate driver. GANSPIN611TR integrates two 138mΩ, 650V HEMT GaN with 10A drain current, while GANSPIN612TR provides a pin-to-pin option with 270mΩ and 5.5A drain current.
Designed for motion control, both variants optimize voltage slew rate output to 10V/ns in hard-on and hard-off transitions, tailored for EMI and motor reliability.
The integrated driver includes linear regulators for high-side and low-side supplies, an internal bootstrap diode, a comparator for overcurrent detection with smart shutdown, and under-voltage lockout (UVLO) monitoring on the voltage supply for logic, and for the high- and low-side driver. Interlocking, shutdown, standby and fault pins support robust system control, with a 55ns gate driver contributing to an overall 150ns output propagation delay. Inputs are compatible from 3.3V to 20V with hysteresis and pull-down.
Part Number: EVLGANSPIN1-3PH
The EVLGANSPIN1-3PH is a three-phase inverter reference design based on GANSPIN611 and an STM32G431RB Arm® Cortex™-M4 MCU at 170MHz, built for sensorless field-oriented control (FOC) of permanent magnet synchronous motors (PMSMs) and brushless dc (BLDC) motors.
The board includes a 230V ac mains input filter and rectifier, uses a 3-shunt topology, and demonstrates typical power up to 400W at 16kHz with dV/dt tuned to 10V/ns for EMI and motor reliability. It provides UART, Hall sensor, and SWD interfaces and includes 12V, 5V, and 3.3V supply rails generated with VIPER06LS, with shunt amplifiers using TSV911ILT.
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