The STMicroelectronics PowerGaN transistor family targets designers who need higher switching speed and improved efficiency than silicon super-junction MOSFETs, without the reverse recovery penalties that often limit hard-switching performance. The product family features enhancement-mode, normally off gallium nitride (GaN) high electron mobility transistor (HEMT) switches, optimized for high power density topologies such as quasi-resonant flyback, active clamp flyback, and high-frequency dc-dc stages.
A key differentiator across the family is the combination of low drain-source on-resistance (RDS(on)) options with extremely low dynamic parameters, particularly total gate charge (Qg) and output capacitance (Coss). That directly translates into faster transitions, lower gate-drive power, and reduced energy lost each cycle, enabling higher switching frequencies.
Product code | RDS(on) max. | Continuous Drain Current | Qg (typical) | Ciss (typical) | Thermal Resistance Junction-to-Case (RthJC) |
SGT070R70HTO | 70mΩ | 26A | 8.5nC | 300pF | 0.54°C/W |
SGT105R70ILB | 105mΩ | 21.7A | 4.8nC | 179pF | 0.79°C/W |
SGT140R70ILB | 140mΩ | 17A | 3.5nC | 125pF | 1.1°C/W |
SGT240R70ILB | 240mΩ | 10A | 2nC | 79pF | 1.64°C/W |
SGT350R70GTK | 350mΩ | 6A | 1.5nC | 50pF | 2.63°C/W |
Packaging also supports power density goals. The PowerFLAT 8mm x 8mm High Voltage for PowerGaN options, SGT105R70ILB, SGT140R70ILB and SGT240R70ILB, and the TO-Leadless (TO-LL) option, SGT070R70HTO, includes a Kelvin source connection to improve gate-drive referencing and help reduce parasitic inductance in the switching loop. This can reduce ringing and overshoot while maintaining fast switching. For consumer quasi-resonant designs, SGT350R70GTK comes in Decawatt Package (DPAK).
