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onsemi | FQD3P50TM

Manufacturer Part #

FQD3P50TM

P-Channel 500 V 4.9 Ohm Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2614
Product Specification Section
onsemi FQD3P50TM - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 4.9Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 23nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD3P50TM is a 500 V 4.9 Ω P-Channel enhancement mode power field effect transistors are produced using DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • 2.1 A, -500 V, RDS(on) = 4.9 Ω @VGS = -10 V
  • Low gate charge ( typical 18 nC)
  • Low Crss ( typical 9.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS Compliant

Applications:

  • Low voltage applications
  • High efficiency switching DC/DC converters
  • DC motor control

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$3,300.00
USD
Quantity
Unit Price
2,500
$1.32
5,000+
$1.30
Product Variant Information section