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Diodes Incorporated | DMT6018LDR-7

Manufacturer Part #

DMT6018LDR-7

DMT Series 60 V 17 mOhm 1.9 W SMT Dual N-Ch Enhancement Mode Mosfet - DFN-3030-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMT6018LDR-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 17mΩ
Rated Power Dissipation: 1.1W
Qg Gate Charge: 13.9nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.8A
Turn-on Delay Time: 3.5ns
Turn-off Delay Time: 10.8ns
Rise Time: 4.6ns
Fall Time: 3.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 869pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,230.00
USD
Quantity
Unit Price
3,000
$0.41
6,000
$0.405
9,000
$0.40
15,000+
$0.395
Product Variant Information section