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onsemi | FQD13N10TM

Manufacturer Part #

FQD13N10TM

N-Channel 100 V 0.18 Ohm 16 nC Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2623
Product Specification Section
onsemi FQD13N10TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 180mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 20ns
Rise Time: 55ns
Fall Time: 25ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 345pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD13N10TM is a 100 V 0.18 Ohm N-Channel enhancement mode power field effect transistor.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand a high energy pulse in the avalanche and commutation modes.

Features:

  • 10 A, 100 V, RDS(on) = 0.18 Ω @VGS = 10 V
  • Low gate charge (typical 12nC)
  • Low Crss (typical 20 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability 

Applications:

  • Audio amplifier
  • DC/DC converters
  • DC motor control ?

 

Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:Order inventroy details
10,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$937.50
USD
Quantity
Unit Price
2,500
$0.375
5,000
$0.37
10,000
$0.365
12,500+
$0.36
Product Variant Information section