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Manufacturer Part #

IRF4905PBF

Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF4905PBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.02Ω
Rated Power Dissipation: 200W
Qg Gate Charge: 180nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 74A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 61ns
Rise Time: 99ns
Fall Time: 96ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 8.77mm
Length: 10.54mm
Input Capacitance: 3400pF
Package Style:  TO-220-3 (TO-220AB)
Pricing Section
Global Stock:
0
USA:
0
321,300
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$5.52
USD
Quantity
Web Price
1
$5.52
20
$5.01
75
$4.80
250
$4.62
1,000+
$4.42
Product Variant Information section