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Infineon Technologies | IRF4905PBF

Manufacturer Part #

IRF4905PBF

Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2415
Product Specification Section
Infineon Technologies IRF4905PBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.02Ω
Rated Power Dissipation: 200W
Qg Gate Charge: 180nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 74A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 61ns
Rise Time: 99ns
Fall Time: 96ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 8.77mm
Length: 10.54mm
Input Capacitance: 3400pF
Package Style:  TO-220-3 (TO-220AB)
Pricing Section
Global Stock:
78,050
USA:
78,050
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$49.75
USD
Quantity
Unit Price
50
$0.995
200
$0.97
1,000
$0.94
2,000
$0.925
6,250+
$0.895
Product Variant Information section