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Vishay | SI8810EDB-T2-E1

Manufacturer Part #

SI8810EDB-T2-E1

20V, 2.9A, 0.072ohm, TrenchFET®, N-Channel, MICROFOOT 0.8X0.8
ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2623
Product Specification Section
Vishay SI8810EDB-T2-E1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 72mΩ
Rated Power Dissipation: 0.5W
Qg Gate Charge: 5.2nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 2.1A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 15ns
Rise Time: 10ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Input Capacitance: 245pF
Series: TrenchFET
Package Style:  MICRO-FOOT
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,500.00
USD
Quantity
Unit Price
3,000
$0.50
6,000
$0.495
9,000
$0.49
15,000+
$0.48
Product Variant Information section