text.skipToContent text.skipToNavigation

Manufacturer Part #

STB80NF10T4

N-Channel 100 V 0.015 Ω 135 nC Surface Mount STripFET™ II Power MosFet- D2PAK

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.015Ω
Rated Power Dissipation: 300|W
Qg Gate Charge: 135nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB80NF10T4 is a Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.

Features:

  • Exceptional dv/dt capability
  • 100% Avalanche tested
  • Application oriented characterization

Applications:

  • Switching applications
Pricing Section
Stock:
2,000
Minimum Order:
1,000
Multiple Of:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Total
$2,050.00
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
1,000
$2.05
2,000
$1.67
3,000
$1.65
4,000+
$1.64