onsemi | NDS331N

The NDS331N is a Part of NDS Series N-Channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

• 1.3 A, 20 V.
• RDS(ON) = 0.21O @ VGS= 2.7 V
• RDS(ON) = 0.16 O @ VGS= 4.5 V
• Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
• High density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability.

Applications:

• Automation
• Broadband Access
• Broadband Modem
• Broadcast & Studio
• Building & Home Control
• Camcorder