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Manufacturer Part #

NXH80T120L3Q0S3G

IGBT Modules PIM gen3 1200V 80A

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NXH80T120L3Q0S3G - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Power Dissipation-Tot: 188W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 225A
Collector - Emitter Saturation Voltage: 1.7V
Turn-on Delay Time: 51ns
Turn-off Delay Time: 200ns
Qg Gate Charge: 817nC
Reverse Recovery Time-Max: 32ns
Leakage Current: 300nA
Input Capacitance: 18150pF
Thermal Resistance: 0.51°C/W
Operating Temp Range: -40°C to +175°C
No of Terminals: 20
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
22 Weeks
Minimum Order:
24
Multiple Of:
24
Total
$1,544.40
USD
Quantity
Unit Price
24
$64.35
48+
$63.55
Product Variant Information section