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Référence fabricant
IPB042N10N3GATMA1
Single N-Channel 100 V 4.2 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
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Infineon IPB042N10N3GATMA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Description of Change:Capacity extension of assembly and final test location to Infineon Technologies Tijuana, Mexico for dedicated products in TO263 package.Reason for Change:Extension of assembly and final test sites for additional capacity to ensure the continuity of supply and flexible manufacturing.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPB042N10N3GATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipb042n10n3gatma1-infineon-7060176
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPB042N10N3GATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipb042n10n3gatma1-infineon-7060176
Infineon IPB042N10N3GATMA1 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 4.2mΩ |
| Rated Power Dissipation: | 214W |
| Qg Gate Charge: | 88nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 137A |
| Turn-on Delay Time: | 27ns |
| Turn-off Delay Time: | 48ns |
| Rise Time: | 59ns |
| Fall Time: | 14ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.7V |
| Technology: | OptiMOS |
| Input Capacitance: | 6320pF |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
1000 par
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount