
Manufacturer Part #
SCT20N120
N-Channel 1200 V 290 mΩ 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™
Product Specification Section
STMicroelectronics SCT20N120 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics SCT20N120 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Product Status: | Active |
Fet Type: | N-Ch |
No. of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain Current: | 20A |
Input Capacitance: | 650pF |
Power Dissipation: | 175W |
Operating Temp Range: | -55°C to +200°C |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
304
USA:
304
On Order:
0
Factory Lead Time:
32 Weeks
Quantity
Unit Price
1
$6.98
5
$6.90
30
$6.82
100
$6.76
300+
$6.65
Product Variant Information section
Available Packaging
Package Qty:
1 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole