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onsemi | FCH072N60F

Manufacturer Part #

FCH072N60F

Single N-Channel 600 V 481 W 215 nC Silicon Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2523
Product Specification Section
onsemi FCH072N60F - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 72mΩ
Rated Power Dissipation: 481W
Qg Gate Charge: 215nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 52A
Turn-on Delay Time: 43ns
Turn-off Delay Time: 140ns
Rise Time: 38ns
Fall Time: 25ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 20.82mm
Length: 15.87mm
Input Capacitance: 6510pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
450
USA:
450
On Order:
0
Factory Stock:Factory Stock:
3
Factory Lead Time:
13 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,398.50
USD
Quantity
Unit Price
450
$5.33
900
$5.31
1,350+
$5.29
Product Variant Information section