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Taiwan Semiconductor | TSM680P06DPQ56 RLG

Manufacturer Part #

TSM680P06DPQ56 RLG

-60V, -12A, Dual P-Channel Power MOSFET

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2519
Product Specification Section
Taiwan Semiconductor TSM680P06DPQ56 RLG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 68mΩ
Rated Power Dissipation: 3.5W
Qg Gate Charge: 16.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 8.3ns
Turn-off Delay Time: 64.6ns
Rise Time: 42.4ns
Fall Time: 16.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.6V
Input Capacitance: 870pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,100.00
USD
Quantity
Unit Price
2,500
$0.44
5,000
$0.435
7,500
$0.43
10,000
$0.425
12,500+
$0.42
Product Variant Information section