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Vishay | SQJ180EP-T1_GE3

Manufacturer Part #

SQJ180EP-T1_GE3

N-CHANNEL 80-V (D-S) 175C MOSFET

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2444
Product Specification Section
Vishay SQJ180EP-T1_GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 3mΩ
Rated Power Dissipation: 500W
Qg Gate Charge: 78nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 248A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 39ns
Rise Time: 10ns
Fall Time: 9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.7V
Input Capacitance: 4746pF
Series: TrenchFET Gen IV
Package Style:  POWERPAK-SO-8L
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$2,730.00
USD
Quantity
Unit Price
3,000
$0.91
6,000+
$0.89
Product Variant Information section