Infineon 1ED3330MC12M Single-Channel Isolated Gate Driver IC
Optimized for high-performance SiC applications
The Infineon 1ED3330MC12M EiceDRIVER™ Enhanced is a high-performance single-channel isolated gate driver IC designed to meet the demanding requirements of SiC MOSFET applications. Delivering a typical peak output current of ±12 A in a compact DSO 300 mil package, it combines high efficiency, reliability, and protection in a space-saving design.
Integrated protection features, including DESAT detection, Miller clamp driver, and active shutdown, ensure safe and robust operation even under challenging conditions.
Features- Integrated protection features for enhanced reliability
- ±12 A typical peak output current for strong SiC MOSFET drive capability
- Separate source and sink outputs for optimized control
- 35 V absolute maximum output voltage
- UVLO specifically designed for SiC MOSFETs
- Fast DESAT detect and fault notification
- 3.3 V and 5 V compatible input supply
- High CMTI >200 kV/µs for superior noise immunity
- Compact DSO 300 mil package with 0.65 mm pitch and >8 mm creepage distance
- Integrated Miller clamp driver to prevent false turn-on
| Benefits- Output current ideal for high-speed SiC switching
- Reduces circuit complexity and design effort
- Space-saving package optimizes PCB layout
- Fast short-circuit detection for system protection
- Simplified fault management via FLT pin
- Tight delay matching enables low deadtime and higher efficiency
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Applications
- Battery Energy Storage Systems (BESS)
- Electric Vehicle (EV) Charging Infrastructure
- Photovoltaic Inverters
| - Motor Control Systems
- Uninterruptible Power Supplies (UPS)
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