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Infineon | BSC050NE2LSATMA1

Manufacturer Part #

BSC050NE2LSATMA1

Single N-Channel 25 V 7.1 mOhm 7 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC050NE2LSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 5mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 10.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 39A
Turn-on Delay Time: 2.5ns
Turn-off Delay Time: 11.4ns
Rise Time: 2.2ns
Fall Time: 2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 760pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,225.00
USD
Quantity
Unit Price
5,000
$0.245
10,000
$0.24
20,000+
$0.235
Product Variant Information section