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Manufacturer Part #

IPD042P03L3GATMA1

Single P-Channel 30 V 4.2 mOhm 131 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 4.2mΩ
Rated Power Dissipation: 150|W
Qg Gate Charge: 131nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
43 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,350.00
USD
Quantity
Web Price
2,500
$0.94
5,000+
$0.75
Product Variant Information section