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onsemi | MMUN2235LT1G

Manufacturer Part #

MMUN2235LT1G

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW SM

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2507
Product Specification Section
onsemi MMUN2235LT1G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 50V
Collector Current Max: 100mA
Power Dissipation-Tot: 246mW
Collector - Base Voltage: 50V
Collector - Emitter Saturation Voltage: 0.25V
Collector - Current Cutoff: 500nA
Operating Temp Range: -55°C to +150°C
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
51,000
Factory Stock:Factory Stock:
4
Factory Lead Time:
41 Weeks
Minimum Order:
42000
Multiple Of:
3000
Total
$672.00
USD
Quantity
Unit Price
3,000
$0.0166
9,000
$0.0162
15,000
$0.016
60,000
$0.0155
90,000+
$0.0152
Product Variant Information section