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Référence fabricant
APT25GN120B2DQ2G
APT25GN120DQ2 Series 155 nC 1200 V 67 A Field Stop - Trench Gate IGBT - TO-247-3
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :T-MAX Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Microchip APT25GN120B2DQ2G - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Qualification of Tin (Sn) as a new terminal plating for selected APL502, APL602, APT100, APT10M, APT11N, APT120, APT13G, APT150, APT15D, APT15G, APT200, APT20G, APT20M, APT25G, APT30D, APT30G, APT30M, APT30S, APT33G, APT35G, APT401, APT40D, APT40G, APT40M, APT45G, APT47N, APT501, APT502, APT50G, APT50M, APT601, APT602, APT603, APT60D, APT60M, APT60S, APT65G, APT75G, APT801, APT802, APT803, APT804, APT805, APT806, APT807, APT80G, APT94N, CC1105, CC1215, CC2515, CC3037, CC3038, CC3069 and CC3125 Microsemi Power Discrete TO-247 products.Reason for Change: To improve productivity by a change in terminal platingEstimated First Ship Date: 02 January 2026 (date code: 2601)
Description of Change:Qualification of MCSO6 as an additional fabrication site for selected APT1xx, APT2xx, APT3xx, APT4xx, APT5xx, APT6xx and APT8xx device families available in various packages.Reason for Change:To improve productivity by qualifying MCSO6 as an additional fabrication site.Change Implementation Status:In ProgressEstimated First Ship Date:January 16, 2023 (date code: 2303)
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=APT25GN120B2DQ2G&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--igbts/apt25gn120b2dq2g-microchip-5032112
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=APT25GN120B2DQ2G&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--igbts/apt25gn120b2dq2g-microchip-5032112
Microchip APT25GN120B2DQ2G - Caractéristiques techniques
| CE Voltage-Max: | 1200V |
| Collector Current @ 25C: | 67A |
| Power Dissipation-Tot: | 272W |
| Gate - Emitter Voltage: | ±30V |
| Pulsed Collector Current: | 75A |
| Collector - Emitter Saturation Voltage: | 1.7V |
| Turn-on Delay Time: | 22ns |
| Turn-off Delay Time: | 280ns |
| Qg Gate Charge: | 155nC |
| Reverse Recovery Time-Max: | 350ns |
| Leakage Current: | 600nA |
| Input Capacitance: | 1800pF |
| Thermal Resistance: | 0.46°C/W |
| Operating Temp Range: | -55°C to +150°C |
| No of Terminals: | 3 |
| Style d'emballage : | T-MAX |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
T-MAX
Méthode de montage :
Through Hole