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Référence fabricant
NDS9945
Dual N-Channel 60 V 0.3 Ohm 30 nC 2 W DMOS Surface Mount Mosfet - SOIC-8
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2527 | ||||||||||
onsemi NDS9945 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=NDS9945&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/nds9945-onsemi-9128364
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=NDS9945&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/nds9945-onsemi-9128364
onsemi NDS9945 - Caractéristiques techniques
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 0.3Ω |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 30nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 3.5A |
| Turn-on Delay Time: | 25ns |
| Turn-off Delay Time: | 50ns |
| Rise Time: | 30ns |
| Fall Time: | 40ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | DMOS |
| Input Capacitance: | 345pF |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The NDS9945 is a Part of NDS Series N-Channel Enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.
These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features:
- 3.5 A, 60 V
- RDS(ON) = 0.100 O @ VGS = 10 V
- RDS(ON) = 0.200 O @ VGS = 4.5 V
- High density cell design for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
- Dual MOSFET in surface mount package
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount