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Infineon CoolSiC™ MOSFET Half-Bridge Modules 1200 V / 2000 V
Enabling improved system efficiency
Infineon’s CoolSiC™ MOSFET power modules are engineered to unlock new levels of efficiency and power density in modern inverter designs. Leveraging Silicon Carbide (SiC) instead of traditional silicon IGBTs, these modules enable improved system efficiency through higher switching frequencies and elevated operating temperatures.
Built on Infineon’s advanced trench semiconductor technology, CoolSiC™ MOSFETs deliver ultra-low conduction and switching losses while maintaining exceptional reliability. Available in multiple configurations and package types—including EasyDUAL™ 1B/2B/3B, 62mm, and EconoDUAL—these modules provide scalable, flexible power solutions.
Highlighted devices include:
- FF4MR12W2M1H_B70: EasyDUAL™ 2B half-bridge, 1200 V, 4 mΩ
- FF6MR20W2M1H_B70: EasyDUAL™ 2B half-bridge, 2000 V, 6 mΩ
Both feature integrated NTC temperature sensors, PressFIT contact technology, and aluminum nitride ceramic for superior thermal performance.
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