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Manufacturer Part #

FF4MR12W2M1HB70BPSA1

1200 V 200 A Dual N-Channel Chassis Mount CoolSiC Trench MOSFET Module

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2405
Product Specification Section
Infineon FF4MR12W2M1HB70BPSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 23V
Isolation Voltage-RMS: 3000V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 200A
Configuration: Half Bridge
Operating Temp Range: -40°C to +150°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
2
USA:
2
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
2
Multiple Of:
15
Total
$559.82
USD
Quantity
Web Price
15+
$279.91
Product Variant Information section