Manufacturer Part #
IRFU120PBF
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
|
|
|||||||||||
|
|
|||||||||||
| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:75 per Tube Package Style:TO-251 (IPAK) Mounting Method:Through Hole |
||||||||||
| Date Code: | 2452 | ||||||||||
Vishay IRFU120PBF - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=Asia&field16=en&field2=IRFU120PBF&field4=Vishay&field18=https://p1apac.futureelectronics.com/p/discretes--transistors--mosfets/irfu120pbf-vishay-3725710
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=Asia&field16=en&field2=IRFU120PBF&field4=Vishay&field18=https://p1apac.futureelectronics.com/p/discretes--transistors--mosfets/irfu120pbf-vishay-3725710
Vishay IRFU120PBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.27Ω |
| Rated Power Dissipation: | 42|W |
| Qg Gate Charge: | 16nC |
| Package Style: | TO-251 (IPAK) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-251 (IPAK)
Mounting Method:
Through Hole