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  6. ZXMHC3A01N8TC

Diodes Incorporated | ZXMHC3A01N8TC

Manufacturer Part #

ZXMHC3A01N8TC

MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated ZXMHC3A01N8TC - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 4
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 125mΩ/210mΩ
Rated Power Dissipation: 0.87W
Qg Gate Charge: 3.9nC/5.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.72A/2.06A
Turn-on Delay Time: 1.7ns/1.2ns
Turn-off Delay Time: 6.6ns/12.1ns
Rise Time: 2.3ns/2.3ns
Fall Time: 2.9ns/7.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 190pF/204pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The ZXMHC3A01N8TC is a complementary 30 V MOSFET H-Bridge with low on-resistance and low gate drive.

Features:

  • 2 x N + 2 x P channels in a SOIC package

Applications:

  • DC Motor control
  • DC-AC Inverters

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
42,500
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$962.50
USD
Quantity
Unit Price
2,500+
$0.385
Product Variant Information section