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Infineon | BSC0904NSIATMA1

Manufacturer Part #

BSC0904NSIATMA1

Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP T/R

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC0904NSIATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 3.7mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 20A
Turn-on Delay Time: 3.3s
Turn-off Delay Time: 16s
Rise Time: 4.4s
Fall Time: 3s
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 1100pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,425.00
USD
Quantity
Unit Price
5,000
$0.285
10,000
$0.28
25,000+
$0.275
Product Variant Information section